4V Drive Pch MOSFET
TT8J2
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (4V)
(1)
(2)
(3)
(4)
Abbreviated symbol : J02
Applications
Switching
Packaging specifications
Inner circuit
Each lead has same dimensions
Package
Taping
(8)
(7)
(6)
(5)
Type
TT8J2
Code
Basic ordering unit (pieces)
TR
3000
? 2
? 2
(1) Tr1 Source
? 1
? 1
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(1)
(2)
(3)
(4)
(5) Tr2 Drain
(6) Tr2 Drain
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for the Tr1 and Tr2.>
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(7) Tr1 Drain
(8) Tr1 Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 30
± 20
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
Tch
Tstg
? 1
? 1
? 2
± 2.5
± 10
? 0.8
? 10
1.25
1.0
150
? 55 to + 150
A
A
A
A
W / TOTAL
W / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a ceramic board
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth(ch-a)
?
100
125
° C / W / TOTAL
° C / W / ELEMENT
? Mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.A
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